Transistorë - FET, MOSFET - Vargje

APTC60TDUM35PG

aksione: 688

Lloji FET: 6 N-Channel (3-Phase Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 600V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 72A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

APTM10AM05FTG

aksione: 820

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 100V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 278A, Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs (th) (Max) @ Id: 4V @ 5mA,

APTC60HM70RT3G

aksione: 1479

Lloji FET: 4 N-Channel (H-Bridge) + Bridge Rectifier, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 600V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 39A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

APTC60HM45T1G

aksione: 1300

Lloji FET: 4 N-Channel (H-Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 600V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 49A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

APTC80TA15PG

aksione: 1022

Lloji FET: 6 N-Channel (3-Phase Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 800V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 28A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

APTC80H29T3G

aksione: 2362

Lloji FET: 4 N-Channel (H-Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 800V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 15A, Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

APTM50HM75SCTG

aksione: 667

Lloji FET: 4 N-Channel (H-Bridge), Tipar FET: Silicon Carbide (SiC), Kullimi në tensionin e burimit (Vdss): 500V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 46A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTMC120AM20CT1AG

aksione: 173

Lloji FET: 2 N Channel (Phase Leg), Tipar FET: Silicon Carbide (SiC), Kullimi në tensionin e burimit (Vdss): 1200V (1.2kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 143A (Tc), Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 2mA (Typ),

APTM120A20DG

aksione: 538

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 1200V (1.2kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 50A, Rds On (Max) @ Id, Vgs: 240 mOhm @ 25A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

APTC60AM45T1G

aksione: 293

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 600V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 49A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

APTMC120TAM34CT3AG

aksione: 251

Lloji FET: 6 N-Channel (3-Phase Bridge), Tipar FET: Silicon Carbide (SiC), Kullimi në tensionin e burimit (Vdss): 1200V (1.2kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 74A (Tc), Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V, Vgs (th) (Max) @ Id: 4V @ 15mA,

APTM50DDAM65T3G

aksione: 1269

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 500V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 51A, Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTC60DDAM24T3G

aksione: 1114

Lloji FET: 2 N Channel (Dual Buck Chopper), Tipar FET: Super Junction, Kullimi në tensionin e burimit (Vdss): 600V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

APTM10DSKM19T3G

aksione: 1965

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 100V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 70A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

APTM20AM06SG

aksione: 553

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 200V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 300A, Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 150A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

APTC60DDAM45T1G

aksione: 1722

Lloji FET: 2 N Channel (Dual Buck Chopper), Tipar FET: Super Junction, Kullimi në tensionin e burimit (Vdss): 600V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 49A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

APTM100H18FG

aksione: 404

Lloji FET: 4 N-Channel (H-Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 1000V (1kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 43A, Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

APTM100H35FT3G

aksione: 784

Lloji FET: 4 N-Channel (H-Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 1000V (1kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 22A, Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTM20TAM16FPG

aksione: 537

Lloji FET: 6 N-Channel (3-Phase Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 200V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 104A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTM20AM08FTG

aksione: 774

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 200V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 208A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

APTC80A15SCTG

aksione: 987

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 800V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 28A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

APTM10DHM05G

aksione: 750

Lloji FET: 2 N-Channel (Dual) Asymmetrical, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 100V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 278A, Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs (th) (Max) @ Id: 4V @ 5mA,

APTM50HM75STG

aksione: 723

Lloji FET: 4 N-Channel (H-Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 500V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 46A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTM20AM04FG

aksione: 346

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 200V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 372A, Rds On (Max) @ Id, Vgs: 5 mOhm @ 186A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

APTC60AM18SCG

aksione: 415

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 600V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 143A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 71.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 4mA,

APTM100A13SG

aksione: 445

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 1000V (1kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 65A, Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

APTM50AM24SG

aksione: 446

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 500V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 150A, Rds On (Max) @ Id, Vgs: 28 mOhm @ 75A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

APTMC120AM55CT1AG

aksione: 412

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Silicon Carbide (SiC), Kullimi në tensionin e burimit (Vdss): 1200V (1.2kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 55A (Tc), Rds On (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 2mA (Typ),

APTM120H57FTG

aksione: 3119

Lloji FET: 4 N-Channel (H-Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 1200V (1.2kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 17A, Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTM50DHM35G

aksione: 3087

Lloji FET: 2 N-Channel (Dual) Asymmetrical, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 500V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 99A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

APTMC120HRM40CT3AG

aksione: 3001

Lloji FET: 2 N-Channel (Dual), Tipar FET: Silicon Carbide (SiC), Kullimi në tensionin e burimit (Vdss): 1200V (1.2kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 73A (Tc), Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V, Vgs (th) (Max) @ Id: 3V @ 12.5mA,

APTC60DSKM45CT1G

aksione: 2944

Lloji FET: 2 N-Channel (Dual), Tipar FET: Super Junction, Kullimi në tensionin e burimit (Vdss): 600V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 49A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

APTM20DHM16T3G

aksione: 2948

Lloji FET: 2 N-Channel (Dual) Asymmetrical, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 200V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 104A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTM100VDA35T3G

aksione: 3387

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 1000V (1kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 22A, Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTJC120AM25VCT1AG

aksione: 3378

APTMC120HR11CT3AG

aksione: 2997

Lloji FET: 2 N-Channel (Dual), Tipar FET: Silicon Carbide (SiC), Kullimi në tensionin e burimit (Vdss): 1200V (1.2kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 26A (Tc), Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V, Vgs (th) (Max) @ Id: 3V @ 5mA,