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Transistorët - JFET

2SK879-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SK879-Y(TE85L,F)

aksione: 198791

Lloji FET: N-Channel, Rryma - Drain (Idss) @ Vds (Vgs = 0): 1.2mA @ 10V, Tensioni - Ndërprerja (VGS e fikur) @ Id: 400mV @ 100nA,

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2SK2145-GR(TE85L,F
Toshiba Semiconductor and Storage

2SK2145-GR(TE85L,F

aksione: 405

Lloji FET: 2 N-Channel (Dual), Rryma - Drain (Idss) @ Vds (Vgs = 0): 2.6mA @ 10V, Tensioni - Ndërprerja (VGS e fikur) @ Id: 200mV @ 100nA,

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2SK879-GR(TE85L,F)
Toshiba Semiconductor and Storage

2SK879-GR(TE85L,F)

aksione: 389

Lloji FET: N-Channel, Rryma - Drain (Idss) @ Vds (Vgs = 0): 2.6mA @ 10V, Tensioni - Ndërprerja (VGS e fikur) @ Id: 400mV @ 100nA,

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2SK208-O(TE85L,F)
Toshiba Semiconductor and Storage

2SK208-O(TE85L,F)

aksione: 342

Lloji FET: N-Channel, Rryma - Drain (Idss) @ Vds (Vgs = 0): 600µA @ 10V, Tensioni - Ndërprerja (VGS e fikur) @ Id: 400mV @ 100nA,

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2SK208-GR(TE85L,F)
Toshiba Semiconductor and Storage

2SK208-GR(TE85L,F)

aksione: 340

Lloji FET: N-Channel, Rryma - Drain (Idss) @ Vds (Vgs = 0): 2.6mA @ 10V, Tensioni - Ndërprerja (VGS e fikur) @ Id: 400mV @ 100nA,

Listoj
2SK2145-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SK2145-Y(TE85L,F)

aksione: 123563

Lloji FET: 2 N-Channel (Dual), Rryma - Drain (Idss) @ Vds (Vgs = 0): 1.2mA @ 10V, Tensioni - Ndërprerja (VGS e fikur) @ Id: 200mV @ 100nA,

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2SK880-BL(TE85L,F)
Toshiba Semiconductor and Storage

2SK880-BL(TE85L,F)

aksione: 403

Lloji FET: N-Channel, Tensioni - Ndarja (V (BR) GSS): 50V, Rryma - Drain (Idss) @ Vds (Vgs = 0): 6mA @ 10V, Tensioni - Ndërprerja (VGS e fikur) @ Id: 1.5V @ 100nA,

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2SK880GRTE85LF
Toshiba Semiconductor and Storage

2SK880GRTE85LF

aksione: 100454

Lloji FET: N-Channel, Tensioni - Ndarja (V (BR) GSS): 50V, Rryma - Drain (Idss) @ Vds (Vgs = 0): 2.6mA @ 10V, Tensioni - Ndërprerja (VGS e fikur) @ Id: 1.5V @ 100nA,

Listoj
2SK208-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SK208-Y(TE85L,F)

aksione: 407

Lloji FET: N-Channel, Rryma - Drain (Idss) @ Vds (Vgs = 0): 1.2mA @ 10V, Tensioni - Ndërprerja (VGS e fikur) @ Id: 400mV @ 100nA,

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2SK3320-BL(TE85L,F
Toshiba Semiconductor and Storage

2SK3320-BL(TE85L,F

aksione: 9964

Lloji FET: N-Channel, Rryma - Drain (Idss) @ Vds (Vgs = 0): 6mA @ 10V, Tensioni - Ndërprerja (VGS e fikur) @ Id: 200mV @ 100nA,

Listoj
2SK2145-BL(TE85L,F
Toshiba Semiconductor and Storage

2SK2145-BL(TE85L,F

aksione: 177718

Lloji FET: 2 N-Channel (Dual), Rryma - Drain (Idss) @ Vds (Vgs = 0): 6mA @ 10V, Tensioni - Ndërprerja (VGS e fikur) @ Id: 200mV @ 100nA,

Listoj
2SK208-R(TE85L,F)
Toshiba Semiconductor and Storage

2SK208-R(TE85L,F)

aksione: 9975

Lloji FET: N-Channel, Rryma - Drain (Idss) @ Vds (Vgs = 0): 300µA @ 10V, Tensioni - Ndërprerja (VGS e fikur) @ Id: 400mV @ 100nA,

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2SK3320-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SK3320-Y(TE85L,F)

aksione: 3488

Lloji FET: N-Channel, Rryma - Drain (Idss) @ Vds (Vgs = 0): 1.2mA @ 10V, Tensioni - Ndërprerja (VGS e fikur) @ Id: 200mV @ 100nA,

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2SK880-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SK880-Y(TE85L,F)

aksione: 110749

Lloji FET: N-Channel, Tensioni - Ndarja (V (BR) GSS): 50V, Rryma - Drain (Idss) @ Vds (Vgs = 0): 1.2mA @ 10V, Tensioni - Ndërprerja (VGS e fikur) @ Id: 1.5V @ 100nA,

Listoj