Transistorë - FET, MOSFET - Vargje

Shtëpi
Transistorë - FET, MOSFET - Vargje

TPCL4202(TE85L,F)

Toshiba Semiconductor and Storage

TPCL4202(TE85L,F)

aksione: 2949

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Standard, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Listoj

TPCF8304(TE85L,F,M

Toshiba Semiconductor and Storage

TPCF8304(TE85L,F,M

aksione: 2938

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3.2A, Rds On (Max) @ Id, Vgs: 72 mOhm @ 1.6A, 10V, Vgs (th) (Max) @ Id: 1.2V @ 1mA,

Listoj

SSM6L13TU(T5L,F,T)

Toshiba Semiconductor and Storage

SSM6L13TU(T5L,F,T)

aksione: 2912

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, 1.8V Drive, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 800mA (Ta), Rds On (Max) @ Id, Vgs: 143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Listoj

Toshiba Semiconductor and Storage

SSM6N48FU,RF(D

aksione: 2967

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, 2.5V Drive, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Listoj

Toshiba Semiconductor and Storage

SSM6N68NU,LF

aksione: 16268

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, 1.8V Drive, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4A (Ta), Rds On (Max) @ Id, Vgs: 84 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Listoj

Toshiba Semiconductor and Storage

SSM6N35AFU,LF

aksione: 9923

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

Listoj

SSM6N42FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6N42FE(TE85L,F)

aksione: 2976

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 800mA, Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Listoj

Toshiba Semiconductor and Storage

SSM6N815R,LF

aksione: 9939

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, 4V Drive, Kullimi në tensionin e burimit (Vdss): 100V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2A (Ta), Rds On (Max) @ Id, Vgs: 103 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 100µA,

Listoj

Toshiba Semiconductor and Storage

SSM6L35FE,LM

aksione: 172252

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 180mA, 100mA, Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Listoj

Toshiba Semiconductor and Storage

SSM6N67NU,LF

aksione: 9963

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, 1.8V Drive, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4A (Ta), Rds On (Max) @ Id, Vgs: 39.1 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Listoj

Toshiba Semiconductor and Storage

SSM6N35AFE,LF

aksione: 13256

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, 1.2V Drive, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

Listoj

Toshiba Semiconductor and Storage

SSM6P35FE,LM

aksione: 173905

Lloji FET: 2 P-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 100mA, Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Listoj

SSM6P15FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6P15FE(TE85L,F)

aksione: 13232

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 100mA, Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.7V @ 100µA,

Listoj

SSM6N37CTD(TPL3)

Toshiba Semiconductor and Storage

SSM6N37CTD(TPL3)

aksione: 2957

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 250mA, Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Listoj

SSM6P41FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6P41FE(TE85L,F)

aksione: 13283

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 720mA, Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Listoj

TPC8405(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8405(TE12L,Q,M)

aksione: 3098

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 6A, 4.5A, Rds On (Max) @ Id, Vgs: 26 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Listoj

Toshiba Semiconductor and Storage

SSM6N357R,LF

aksione: 16211

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 650mA (Ta), Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Listoj

SSM6P35FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6P35FE(TE85L,F)

aksione: 121978

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 100mA, Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Listoj

SSM6L35FU(TE85L,F)

Toshiba Semiconductor and Storage

SSM6L35FU(TE85L,F)

aksione: 156233

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, 1.2V Drive, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 180mA, 100mA, Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Listoj

Toshiba Semiconductor and Storage

SSM6L61NU,LF

aksione: 154751

Lloji FET: N and P-Channel, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4A,

Listoj

Toshiba Semiconductor and Storage

SSM6N48FU,RF

aksione: 3013

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 100mA, Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Listoj

SSM6N7002BFU,LF

Toshiba Semiconductor and Storage

SSM6N7002BFU,LF

aksione: 154781

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 200mA, Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 3.1V @ 250µA,

Listoj

Toshiba Semiconductor and Storage

SSM6N61NU,LF

aksione: 117701

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, 1.5V Drive, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 33 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Listoj

Toshiba Semiconductor and Storage

SSM6P49NU,LF

aksione: 154268

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 1.2V @ 1mA,

Listoj

SSM6N16FUTE85LF

Toshiba Semiconductor and Storage

SSM6N16FUTE85LF

aksione: 9999

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 100mA, Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.1V @ 100µA,

Listoj

Toshiba Semiconductor and Storage

SSM6L36FE,LM

aksione: 107404

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 500mA, 330mA, Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Listoj

TPCP8203(TE85L,F)

Toshiba Semiconductor and Storage

TPCP8203(TE85L,F)

aksione: 2780

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 40V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4.7A, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Listoj

SSM6N7002BFE(T5L,F

Toshiba Semiconductor and Storage

SSM6N7002BFE(T5L,F

aksione: 2844

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 200mA, Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 3.1V @ 250µA,

Listoj

TPC8211(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8211(TE12L,Q,M)

aksione: 2801

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5.5A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Listoj

TPC8213-H(TE12LQ,M

Toshiba Semiconductor and Storage

TPC8213-H(TE12LQ,M

aksione: 2813

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

Listoj

TPC8208(TE12L,Q)

Toshiba Semiconductor and Storage

TPC8208(TE12L,Q)

aksione: 2694

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Listoj

TPCF8201(TE85L,F,M

Toshiba Semiconductor and Storage

TPCF8201(TE85L,F,M

aksione: 2756

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Listoj

TPC8212-H(TE12LQ,M

Toshiba Semiconductor and Storage

TPC8212-H(TE12LQ,M

aksione: 2781

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

Listoj

TPCP8401(TE85L,F)

Toshiba Semiconductor and Storage

TPCP8401(TE85L,F)

aksione: 3345

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, 12V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 100mA, 5.5A, Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.1V @ 100µA,

Listoj

TPC8208(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8208(TE12L,Q,M)

aksione: 2829

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Listoj

Toshiba Semiconductor and Storage

TPC8207(TE12L)

aksione: 2650

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 4.8A, 4V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Listoj

66

«
1
2
»