aksione: 412
Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Silicon Carbide (SiC), Kullimi në tensionin e burimit (Vdss): 1200V (1.2kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 55A (Tc), Rds On (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 2mA (Typ),