Transistorë - FET, MOSFET - Vargje

AOP607

aksione: 3275

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AOP609

aksione: 2816

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AOP605

aksione: 2811

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rds On (Max) @ Id, Vgs: 28 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AO4838

aksione: 114715

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 11A, Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA,

AO4882

aksione: 110285

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 40V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AO4852

aksione: 115960

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA,

AO4886

aksione: 2683

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 100V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3.3A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

AON7611

aksione: 168239

Lloji FET: N and P-Channel, Common Drain, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 9A, 18.5A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

AO4803A

aksione: 134931

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5A, Rds On (Max) @ Id, Vgs: 46 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

AO4614B

aksione: 146451

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 40V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 6A, 5A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AO4813

aksione: 174721

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 7.1A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

AO4800B

aksione: 189998

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 6.9A, Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

AO4805

aksione: 180636

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 9A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

AO4630

aksione: 137477

Lloji FET: N and P-Channel Complementary, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5A, 7A, Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 1.45V @ 250µA,

AO4612

aksione: 189775

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4.5A, 3.2A, Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AO4840

aksione: 161636

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 40V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AON6924

aksione: 90862

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 15A, 28A, Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 250µA,

AOD609

aksione: 192201

Lloji FET: N and P-Channel, Common Drain, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 40V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 12A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AOC2804

aksione: 105804

Lloji FET: 2 N-Channel (Dual) Common Drain, Tipar FET: Standard,

AON7804

aksione: 120975

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 9A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AAT7347IAS-T1

aksione: 157898

AUIRFN8459TR

aksione: 64112

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 40V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 50A, Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 40A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 50µA,

AUIRFN8458TR

aksione: 79588

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 40V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 43A (Tc), Rds On (Max) @ Id, Vgs: 10 mOhm @ 26A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 25µA,

AUIRF7341QTR

aksione: 89718

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 55V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5.1A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7319QTR

aksione: 89679

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 6.5A, 4.9A, Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7316QTR

aksione: 89739

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7342QTR

aksione: 91383

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 55V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3.4A, Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7313QTR

aksione: 94924

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 6.9A, Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7304QTR

aksione: 101244

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4.3A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

AUIRF7379QTR

aksione: 101249

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5.8A, 4.3A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7103QTR

aksione: 121994

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 50V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF9952QTR

aksione: 125213

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3.5A, 2.3A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

BSM180D12P3C007

aksione: 168

Lloji FET: 2 N-Channel (Dual), Tipar FET: Silicon Carbide (SiC), Kullimi në tensionin e burimit (Vdss): 1200V (1.2kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 180A (Tc), Vgs (th) (Max) @ Id: 5.6V @ 50mA,

BSM300D12P2E001

aksione: 201

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Silicon Carbide (SiC), Kullimi në tensionin e burimit (Vdss): 1200V (1.2kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 300A (Tc), Vgs (th) (Max) @ Id: 4V @ 68mA,

BSM080D12P2C008

aksione: 263

Lloji FET: 2 N-Channel (Dual), Tipar FET: Silicon Carbide (SiC), Kullimi në tensionin e burimit (Vdss): 1200V (1.2kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 80A (Tc), Vgs (th) (Max) @ Id: 4V @ 13.2mA,

BSS8402DWQ-7

aksione: 194681

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, 50V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 115mA, 130mA, Rds On (Max) @ Id, Vgs: 13.5 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,