Transistorë - FET, MOSFET - Vargje

BSS138DWQ-7

aksione: 137105

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 50V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 200mA, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

BSS138DWQ-13

aksione: 113029

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 50V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 200mA, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

BSS138DW-7-F

aksione: 105835

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 50V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 200mA, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

BSS84V-7

aksione: 195633

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 50V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 130mA, Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V, Vgs (th) (Max) @ Id: 2V @ 1mA,

BSM120D12P2C005

aksione: 258

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Silicon Carbide (SiC), Kullimi në tensionin e burimit (Vdss): 1200V (1.2kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 120A (Tc), Vgs (th) (Max) @ Id: 2.7V @ 22mA,

BSM180D12P2C101

aksione: 243

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Silicon Carbide (SiC), Kullimi në tensionin e burimit (Vdss): 1200V (1.2kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 204A (Tc), Vgs (th) (Max) @ Id: 4V @ 35.2mA,

BUK7K18-40EX

aksione: 171094

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 40V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 24.2A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

BUK9K89-100E,115

aksione: 171088

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 100V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 12.5A, Rds On (Max) @ Id, Vgs: 85 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 1mA,

BSS138BKS,115

aksione: 129700

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 320mA, Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 320mA, 10V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

BUK9K8R7-40EX

aksione: 140529

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 40V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 30A, Rds On (Max) @ Id, Vgs: 8 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 1mA,

BUK9K45-100E,115

aksione: 140499

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 100V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 21A, Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 1mA,

BUK9K29-100E,115

aksione: 120044

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 100V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 30A, Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 1mA,

BUK9K134-100EX

aksione: 189637

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 100V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 8.5A, Rds On (Max) @ Id, Vgs: 159 mOhm @ 5A, 5V, Vgs (th) (Max) @ Id: 2.1V @ 1mA,

BSS84AKS/ZLX

aksione: 3372

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 50V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 160mA (Ta), Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

BUK9MTT-65PBB,518

aksione: 3325

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 65V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 90.4 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

BUK9MRR-65PKK,518

aksione: 3041

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 65V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4.8A (Tc), Rds On (Max) @ Id, Vgs: 60.7 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

BUK9MNN-65PKK,518

aksione: 3039

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 65V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 7.1A (Tc), Rds On (Max) @ Id, Vgs: 32.8 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

BUK9MJJ-65PLL,518

aksione: 3037

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 65V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 11.6A (Tc), Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

BUK9MGP-55PTS,518

aksione: 2984

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 55V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 16.9A (Tc), 9.16A (Tc), Rds On (Max) @ Id, Vgs: 9 mOhm @ 10A, 10V, 22.6 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

BUK9MHH-65PNN,518

aksione: 3036

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 65V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 15A (Tc), Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

BUK9MFF-65PSS,518

aksione: 2995

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 65V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 13.6A (Tc), Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

BUK9MJT-55PRF,518

aksione: 2797

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 55V, Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 10A, 10V,

BSL308CH6327XTSA1

aksione: 146163

Lloji FET: N and P-Channel Complementary, Tipar FET: Logic Level Gate, 4.5V Drive, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.3A, 2A, Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V, Vgs (th) (Max) @ Id: 2V @ 11µA,

BSC0911NDATMA1

aksione: 94888

Lloji FET: 2 N-Channel (Dual) Asymmetrical, Tipar FET: Logic Level Gate, 4.5V Drive, Kullimi në tensionin e burimit (Vdss): 25V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 18A, 30A, Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

BSO615NGHUMA1

aksione: 20316

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.6A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.6A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 20µA,

BSO330N02KGFUMA1

aksione: 3005

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5.4A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 20µA,

BTS7904SAKSA1

aksione: 2985

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 55V, 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 40A, Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 40µA,

BSO4804HUMA2

aksione: 2904

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 8A (Ta), Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2V @ 30µA,

BSL806NL6327HTSA1

aksione: 2870

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.3A, Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V, Vgs (th) (Max) @ Id: 750mV @ 11µA,

BSL207NL6327HTSA1

aksione: 2845

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.1A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.1A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 11µA,

BSL308PEL6327HTSA1

aksione: 3339

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 1V @ 11µA,

BSL308CL6327HTSA1

aksione: 2842

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.3A, 2A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2V @ 11µA,

BSL314PEL6327HTSA1

aksione: 3308

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 1.5A, Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 6.3µA,

BSD840N L6327

aksione: 2834

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 880mA, Rds On (Max) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V, Vgs (th) (Max) @ Id: 750mV @ 1.6µA,

BSL306NL6327HTSA1

aksione: 3344

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.3A, Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V, Vgs (th) (Max) @ Id: 2V @ 11µA,

BUK7K6R2-40E/CX

aksione: 3020