Transistorë - FET, MOSFET - Vargje

TC6320TG-G

aksione: 68318

Lloji FET: N and P-Channel, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 200V, Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

TC7920K6-G

aksione: 49864

Lloji FET: 2 N and 2 P-Channel, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 200V, Rds On (Max) @ Id, Vgs: 10 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 1mA,

TD9944TG-G

aksione: 65575

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 240V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

DMN62D0UDW-13

aksione: 155691

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 350mA, Rds On (Max) @ Id, Vgs: 2 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMN21D1UDA-7B

aksione: 144

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 455mA (Ta), Rds On (Max) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

ZXMP6A16DN8QTA

aksione: 85500

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.9A, Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

DMC3025LNS-13

aksione: 159648

Lloji FET: N and P-Channel Complementary, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 7.2A (Ta), 6.8A (Ta), Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

DMN2990UDJQ-7

aksione: 178697

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 450mA (Ta), Rds On (Max) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMN601VKQ-7

aksione: 118878

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 305mA, Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

DMN2008LFU-7

aksione: 177281

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 14.5A, Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250A,

ZXMC3A16DN8TA

aksione: 87629

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4.9A, 4.1A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

DMGD7N45SSD-13

aksione: 105022

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 450V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 10V, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

DMC4047LSD-13

aksione: 107463

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 40V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 7A, 5.1A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

DMNH6022SSD-13

aksione: 191300

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 7.1A, 22.6A, Rds On (Max) @ Id, Vgs: 27 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMN61D8LVT-7

aksione: 191757

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 630mA, Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V, Vgs (th) (Max) @ Id: 2V @ 1mA,

DMN2022UNS-13

aksione: 159447

Lloji FET: 2 N-Channel (Dual) Common Drain, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 10.7A (Ta), Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SC8673040L

aksione: 67245

Lloji FET: 2 N-Channel (Dual) Asymmetrical, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 16A, 46A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 5.85mA,

SC8673010L

aksione: 63520

Lloji FET: 2 N-Channel (Dual) Asymmetrical, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 16A, 40A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 4.38mA,

NVMFD5485NLWFT1G

aksione: 81328

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5.3A, Rds On (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

EFC6604R-TR

aksione: 146764

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, 2.5V Drive,

NTMFD5C446NLT1G

aksione: 65

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 40V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 25A (Ta), 145A (Tc), Rds On (Max) @ Id, Vgs: 2.65 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 90µA,

NTZD3155CT1G

aksione: 120582

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 540mA, 430mA, Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

FDMD8900

aksione: 75697

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 19A, 17A, Rds On (Max) @ Id, Vgs: 4 mOhm @ 19A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

EFC6605R-V-TR

aksione: 166880

VEC2415-TL-W-Z

aksione: 88

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3A (Ta), Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

FDMC6890NZ

aksione: 169827

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4A, Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 250µA,

SI4542DY

aksione: 41210

Lloji FET: N and P-Channel, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTZD3154NT5G

aksione: 195594

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 540mA, Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

NTGD3148NT1G

aksione: 137924

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDS8935

aksione: 118941

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 80V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.1A, Rds On (Max) @ Id, Vgs: 183 mOhm @ 2.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NVMFD5877NLT3G

aksione: 193353

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 6A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDMD84100

aksione: 50072

Lloji FET: 2 N-Channel (Dual) Common Source, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 100V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 7A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

SI1033X-T1-GE3

aksione: 174190

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 145mA, Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

SIA777EDJ-T1-GE3

aksione: 187147

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, 12V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 1.5A, 4.5A, Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

EM6K31T2R

aksione: 181152

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 250mA, Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

EM6K31GT2R

aksione: 153168

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, 2.5V Drive, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 250mA, Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,