Transistorë - FET, MOSFET - Vargje

SI4539ADY-T1-GE3

aksione: 3314

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4.4A, 3.7A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

SI4816BDY-T1-E3

aksione: 93648

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5.8A, 8.2A, Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI1023X-T1-E3

aksione: 2929

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 370mA, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

EPC2100

aksione: 18949

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: GaNFET (Gallium Nitride), Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 10A (Ta), 40A (Ta), Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA,

FDG6306P

aksione: 182663

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 600mA, Rds On (Max) @ Id, Vgs: 420 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NTMFD5C466NLT1G

aksione: 6537

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 40V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 14A (Ta), 52A (Tc), Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 30µA,

NDS9948

aksione: 197045

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.3A, Rds On (Max) @ Id, Vgs: 250 mOhm @ 2.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDC6301N

aksione: 190563

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 25V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 220mA, Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

ECH8654-TL-HX

aksione: 2963

FDS8928A

aksione: 123375

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5.5A, 4A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

NVMFD5C470NLT1G

aksione: 9923

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 40V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 11A (Ta), 36A (Tc), Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 20µA,

FDMA3028N

aksione: 163003

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3.8A, Rds On (Max) @ Id, Vgs: 68 mOhm @ 3.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDS9953A

aksione: 193867

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.9A, Rds On (Max) @ Id, Vgs: 130 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDMD82100L

aksione: 65782

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 100V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 7A, Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SLA5086

aksione: 10743

Lloji FET: 5 P-Channel, Common Source, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5A, Rds On (Max) @ Id, Vgs: 220 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

CSD87313DMST

aksione: 49889

Lloji FET: 2 N-Channel (Dual) Common Drain, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 30V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

CSD85302LT

aksione: 177129

Lloji FET: 2 N-Channel (Dual) Common Drain, Tipar FET: Standard,

CSD88599Q5DC

aksione: 22783

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 60V, Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

CSD86356Q5DT

aksione: 2723

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Logic Level Gate, 5V Drive, Kullimi në tensionin e burimit (Vdss): 25V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 40A (Ta), Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 5V, 0.8 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 1.85V @ 250µA, 1.5V @ 250µA,

DMN1150UFL3-7

aksione: 127702

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 12V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMC1029UFDB-13

aksione: 120593

Lloji FET: N and P-Channel, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 12V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5.6A, 3.8A, Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMN32D4SDW-13

aksione: 172309

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 650mA, Rds On (Max) @ Id, Vgs: 400 mOhm @ 250mA, 10V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

DMN4026SSD-13

aksione: 191283

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 40V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 7A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMT6018LDR-13

aksione: 215

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 8.8A (Ta), Rds On (Max) @ Id, Vgs: 17 mOhm @ 8.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMTH4007SPD-13

aksione: 135932

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 40V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 14.2A, Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

DMP2101UCB9-7

aksione: 3006

DMP2075UFDB-13

aksione: 184

Lloji FET: 2 P-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3.8A (Ta), Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

DMPH6050SPDQ-13

aksione: 140692

Lloji FET: 2 P-Channel (Dual), Tipar FET: Standard, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 26A (Tc), Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SSM6N68NU,LF

aksione: 16268

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, 1.8V Drive, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4A (Ta), Rds On (Max) @ Id, Vgs: 84 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

SSM6N35AFU,LF

aksione: 9923

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

STL20DN10F7

aksione: 63556

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 100V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 20A, Rds On (Max) @ Id, Vgs: 67 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

DF11MR12W1M1B11BOMA1

aksione: 229

Lloji FET: 2 N-Channel (Dual), Tipar FET: Silicon Carbide (SiC), Kullimi në tensionin e burimit (Vdss): 1200V (1.2kV), Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 50A, Rds On (Max) @ Id, Vgs: 23 mOhm @ 50A, 15V, Vgs (th) (Max) @ Id: 5.5V @ 20mA,

FMM60-02TF

aksione: 5122

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 200V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 33A, Rds On (Max) @ Id, Vgs: 40 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

GWS9294

aksione: 2995

Lloji FET: 2 N-Channel (Dual) Common Drain, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 10.1A (Ta), Rds On (Max) @ Id, Vgs: 13 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

PMDT670UPE,115

aksione: 170493

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 550mA, Rds On (Max) @ Id, Vgs: 850 mOhm @ 400mA, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

TSM6963SDCA RVG

aksione: 243

Lloji FET: 2 P-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,