Transistorë - FET, MOSFET - Vargje

ECH8660-S-TL-H

aksione: 2959

FDS6982

aksione: 2700

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 6.3A, 8.6A, Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

ECH8659-TL-H

aksione: 2892

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 7A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V,

FDQ7236AS

aksione: 2900

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 14A, 11A, Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SSD2025TF

aksione: 2716

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3.3A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.3A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

MMDF2C03HDR2

aksione: 2708

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4.1A, 3A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

HUFA76404DK8T

aksione: 2700

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 62V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3.6A, Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NDH8304P

aksione: 2758

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.7A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

MCH6604-TL-E

aksione: 142874

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 50V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 250mA, Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V,

NTJD1155LT1

aksione: 2754

Lloji FET: N and P-Channel, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 8V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 1.3A, Rds On (Max) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

ZXMD63N02XTC

aksione: 2710

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.5A, Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMC62D0SVQ-7

aksione: 24308

Lloji FET: N and P-Channel Complementary, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 60V, 50V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 571mA (Ta), 304mA (Ta), Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 500mA, 10V, 6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

VQ1006P

aksione: 2955

Lloji FET: 4 N-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 90V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 400mA, Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

SIA513DJ-T1-GE3

aksione: 2783

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

VQ3001P-E3

aksione: 2909

Lloji FET: 2 N and 2 P-Channel, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 850mA, 600mA, Rds On (Max) @ Id, Vgs: 1 Ohm @ 1A, 12V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

SI7946DP-T1-E3

aksione: 2803

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 150V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.1A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 3.3A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

SI4952DY-T1-E3

aksione: 3283

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 25V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SIF912EDZ-T1-E3

aksione: 3336

Lloji FET: 2 N-Channel (Dual) Common Drain, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 7.4A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

SI4501ADY-T1-GE3

aksione: 2879

Lloji FET: N and P-Channel, Common Drain, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, 8V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 6.3A, 4.1A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

SI1958DH-T1-E3

aksione: 2701

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 1.3A, Rds On (Max) @ Id, Vgs: 205 mOhm @ 1.3A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

SI4908DY-T1-E3

aksione: 2706

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 40V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SI4947ADY-T1-E3

aksione: 2709

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

SI9934BDY-T1-GE3

aksione: 2797

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 12V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4.8A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.4A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

SSM6L09FUTE85LF

aksione: 24307

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 400mA, 200mA, Rds On (Max) @ Id, Vgs: 700 mOhm @ 200MA, 10V, Vgs (th) (Max) @ Id: 1.8V @ 100µA,

TPCL4201(TE85L,F)

aksione: 2892

Lloji FET: 2 N-Channel (Half Bridge), Tipar FET: Standard, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

IRF7331TR

aksione: 5360

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 7A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

IRF7307QTRPBF

aksione: 2792

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5.2A, 4.3A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

IRF9952PBF

aksione: 2709

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3.5A, 2.3A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

IRF9395MTR1PBF

aksione: 2948

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 14A, Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 50µA,

UPA2375T1P-E1-A

aksione: 126687

Lloji FET: 2 N-Channel (Dual) Common Drain, Tipar FET: Logic Level Gate, 2.5V Drive,

RJM0306JSP-01#J0

aksione: 2927

Lloji FET: 2 N and 2 P-Channel (H-Bridge), Tipar FET: Logic Level Gate, 4V Drive, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3.5A, Rds On (Max) @ Id, Vgs: 65 mOhm @ 2A, 10V,

PMGD175XN,115

aksione: 3339

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 900mA, Rds On (Max) @ Id, Vgs: 225 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

PMGD400UN,115

aksione: 2691

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 710mA, Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

EM6K6T2R

aksione: 176106

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 300mA, Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

TT8M1TR

aksione: 124589

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, 1.5V Drive, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.5A, Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

PHC2300,118

aksione: 186484

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 300V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 340mA, 235mA, Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,