Transistorë - FET, MOSFET - Vargje

DMN2040LSD-13

aksione: 2799

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 7A, Rds On (Max) @ Id, Vgs: 26 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

ZXMD65N02N8TA

aksione: 2663

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 20V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA (Min),

ZDM4206NTA

aksione: 2634

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 1A, Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

DMN32D2LDF-7

aksione: 157687

Lloji FET: 2 N-Channel (Dual) Common Source, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 400mA, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 100mA, 4V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

SI4947ADY-T1-GE3

aksione: 2852

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

SI1913DH-T1-E3

aksione: 2766

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 880mA, Rds On (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

SI4276DY-T1-GE3

aksione: 2851

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SI3905DV-T1-GE3

aksione: 2849

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 8V, Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

SI4913DY-T1-GE3

aksione: 2852

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 7.1A, Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 500µA,

SI3909DV-T1-GE3

aksione: 2826

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V, Vgs (th) (Max) @ Id: 500mV @ 250µA (Min),

SI4944DY-T1-GE3

aksione: 2874

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 9.3A, Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI4933DY-T1-GE3

aksione: 2815

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 12V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 7.4A, Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 500µA,

SI7909DN-T1-GE3

aksione: 2908

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 12V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5.3A, Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 700µA,

SI7844DP-T1-E3

aksione: 3302

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 6.4A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

SI4567DY-T1-GE3

aksione: 2812

Lloji FET: N and P-Channel, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 40V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5A, 4.4A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

NTTD1P02R2G

aksione: 2740

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 1.45A, Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.45A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

FDW2601NZ

aksione: 2725

Lloji FET: 2 N-Channel (Dual) Common Drain, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 8.2A, Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDG6314P

aksione: 2687

Lloji FET: 2 P-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 25V,

FDC6322C

aksione: 2713

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 25V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 220mA, 460mA, Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NTLGD3502NT1G

aksione: 2831

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4.3A, 3.6A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 250µA,

NTLJD2105LTBG

aksione: 2816

Lloji FET: N and P-Channel, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 8V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.5A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

NTHD5902T1

aksione: 2641

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.9A, Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

FDZ2553NZ

aksione: 2698

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 9.6A, Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

IRF7104PBF

aksione: 100274

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.3A, Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

IRF7328TR

aksione: 2700

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

IRF7304PBF

aksione: 67896

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 4.3A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

IRF7530TR

aksione: 2684

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 5.4A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

IRF7755

aksione: 2693

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 20V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3.9A, Rds On (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

IRF7350TRPBF

aksione: 3331

Lloji FET: N and P-Channel, Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 100V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 2.1A, 1.5A, Rds On (Max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

IRF7306QTRPBF

aksione: 2778

Lloji FET: 2 P-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3.6A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

STS3DPF60L

aksione: 2674

Lloji FET: 2 P-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 60V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 120 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

VMM1000-01P

aksione: 2737

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 100V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 1000A, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 800A, 10V, Vgs (th) (Max) @ Id: 4V @ 10mA,

FMM300-0055P

aksione: 2746

Lloji FET: 2 N-Channel (Dual), Tipar FET: Standard, Kullimi në tensionin e burimit (Vdss): 55V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 300A, Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 150A, 10V, Vgs (th) (Max) @ Id: 4V @ 2mA,

QJD1210SB1

aksione: 2931

SP8M8TB

aksione: 3276

Lloji FET: N and P-Channel, Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 6A, 4.5A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

PHKD13N03LT,518

aksione: 123779

Lloji FET: 2 N-Channel (Dual), Tipar FET: Logic Level Gate, Kullimi në tensionin e burimit (Vdss): 30V, Rryma - Kullimi i vazhdueshëm (Id) @ 25 ° C: 10.4A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,